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MRF9060MR1 mrf9060mbr1 1 rf device data freescale semiconductor rf power field effect transistors n ? channel enhancement ? mode lateral mosfets designed for broadband commercial and industrial applications with frequen- cies up to 1000 mhz. the high gain and broadband performance of these devices make them ideal for large ? signal, common ? source amplifier applications in 26 volt base station equipment. ? typical performance at 945 mhz, 26 volts output power ? 60 watts pep power gain ? 18.0 db efficiency ? 40% (two tones) imd ? ? 31.5 dbc ? integrated esd protection ? capable of handling 5:1 vswr, @ 26 vdc, 945 mhz, 60 watts cw output power ? excellent thermal stability ? characterized with series equivalent large ? signal impedance parameters ? to ? 270 dual lead available in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. ? to ? 272 dual lead available in tape and reel. r1 suffix = 500 units per 44 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain ? source voltage v dss ? 0.5, +65 vdc gate ? source voltage v gs ? 0.5, + 15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 223 1.79 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 175 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.56 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. mrf9060m rev. 7, 1/2005 freescale semiconductor technical data MRF9060MR1 mrf9060mbr1 945 mhz, 60 w, 26 v lateral n ? channel broadband rf power mosfets case 1337 ? 03, style 1 to ? 272 dual lead plastic mrf9060mbr1 case 1265 ? 08, style 1 to ? 270 dual lead plastic MRF9060MR1 ? freescale semiconductor, inc., 2005. all rights reserved.
2 rf device data freescale semiconductor MRF9060MR1 mrf9060mbr1 table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m2 (minimum) charge device model MRF9060MR1 mrf9060mbr1 c6 (minimum) c5 (minimum) table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd 22 ? a113, ipc/jedec j ? std ? 020 MRF9060MR1 mrf9060mbr1 1 3 260 260 c table 5. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate ? source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 200 adc) v gs(th) 2 2.8 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 450 madc) v gs(q) 3 3.7 5 vdc drain ? source on ? voltage (v gs = 10 vdc, i d = 1.3 adc) v ds(on) ? 0.21 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 4 adc) g fs ? 5.3 ? s dynamic characteristics input capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 101 ? pf output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 53 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.5 ? pf (continued)
MRF9060MR1 mrf9060mbr1 3 rf device data freescale semiconductor table 5. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) two ? tone common ? source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 18 ? db two ? tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) 37 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd ? ? 31.5 ? 28 dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl ? ? 14.5 ? 9 db two ? tone common ? source amplifier power gain (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps ? 18 ? db two ? tone drain efficiency (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) ? 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd ? ? 31 ? dbc input return loss (v dd = 26 vdc, p out = 60 w pep, i dq = 450 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl ? ? 12.5 ? db
4 rf device data freescale semiconductor MRF9060MR1 mrf9060mbr1 figure 1. 930 ? 960 mhz broadband test circuit schematic z10 0.060 x 0.520 microstrip z11 0.360 x 0.270 microstrip z12 0.060 x 0.270 microstrip z13 0.130 x 0.060 microstrip z14 0.300 x 0.060 microstrip z15 0.210 x 0.060 microstrip z16 0.600 x 0.060 microstrip z17 0.290 x 0.060 microstrip z18 0.340 x 0.060 microstrip z1 0.240 x 0.060 microstrip z2 0.240 x 0.060 microstrip z3 0.500 x 0.100 microstrip z4 0.100 x 0.270 x 0.080 , taper z5 0.330 x 0.270 microstrip z6 0.120 x 0.270 microstrip z7 0.270 x 0.520 x 0.140 , taper z8 0.240 x 0.520 microstrip z9 0.340 x 0.520 microstrip table 6. 930 ? 960 mhz broadband test circuit component designations and values part description part number manufacturer b1 short ferrite bead 95f786 newark b2 long ferrite bead 95f787 newark c1, c7, c13, c14 47 pf chip capacitors 100b470jp 500x atc c2, c3, c11 0.8 ? 8.0 gigatrim variable capacitors 44f3360 newark c4, c5 11 pf chip capacitors (MRF9060MR1) 10 pf chip capacitors (mrf9060mbr1) 100b110jp 500x 100b100jp 500x atc c6, c15, c16 10 f, 35 v tantalum chip capacitors 93f2975 newark c8, c9 10 pf chip capacitors 100b100jp 500x newark c10 3.9 pf chip capacitor 100b3r9cp 500x atc c12 1.7 pf chip capacitor 100b1r7bp 500x atc c17 220 f electrolytic chip capacitor 14f185 newark l1, l2 12.5 nh inductors a04t ? 5 coilcraft n1, n2 n ? type panel mount, stripline 3052 ? 1648 ? 10 avnet wb1, wb2 15 mil brass wear blocks board material 30 mil glass teflon ? , r = 2.55 copper clad, 2 oz cu rf ? 35 ? 0300 taconic pcb etched circuit board to ? 270/to ? 272 surface/bolt dselectronics
MRF9060MR1 mrf9060mbr1 5 rf device data freescale semiconductor cut out area mrf9060mb figure 2. 930 ? 960 mhz broadband test circuit component layout mrf9060m freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
6 rf device data freescale semiconductor MRF9060MR1 mrf9060mbr1 typical characteristics figure 3. class ab broadband circuit performance figure 4. power gain versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain and efficiency versus output power
MRF9060MR1 mrf9060mbr1 7 rf device data freescale semiconductor typical characteristics figure 8. power gain, efficiency, and imd versus output power
8 rf device data freescale semiconductor MRF9060MR1 mrf9060mbr1 f mhz z source ? z load ? 930 945 960 0.63 + j0.57 0.57 + j0.45 0.60 + j0.41 1.8 + j0.84 1.7 + j0.55 1.6 + j0.36 figure 9. series equivalent source and load impedance ? z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground.

MRF9060MR1 mrf9060mbr1 9 rf device data freescale semiconductor notes
10 rf device data freescale semiconductor MRF9060MR1 mrf9060mbr1 package dimensions to ? 270 dual lead plastic MRF9060MR1 case 1265 ? 08 issue g bottom view a1 2x e d1 e4 e1 d2 e3 a2 exposed heatsink area a b d h pin one id ???? ???? ???? ???? ???? ???? ???? ???? ???? 2x b1 2x d3 ? ? ? ? ? ? ? ? ? note 7 c1 f zone j e2 2x a pin 1 pin 2 pin 3 e5 e5
MRF9060MR1 mrf9060mbr1 11 rf device data freescale semiconductor package dimensions to ? 272 dual lead plastic mrf9060mbr1 ? 03 issue b h c a b ! 2x b1 a e1 r1 drain lead d d1 e note 8 y y 1 view y ? y pin 3 a1 a2 "#$%$ 7 2x c1 2 drain id gate lead e2 e2
12 rf device data freescale semiconductor MRF9060MR1 mrf9060mbr1 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2005. all rights reserved. how to reach us: home page: www.freescale.com e ? mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 ? 800 ? 521 ? 6274 or +1 ? 480 ? 768 ? 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 ? 8 ? 1, shimo ? meguro, meguro ? ku, tokyo 153 ? 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 ? 800 ? 441 ? 2447 or 303 ? 675 ? 2140 fax: 303 ? 675 ? 2150 ldcforfreescalesemiconductor@hibbertgroup.com mrf9060m rev. 7, 1/2005 document number:

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